MIL-PRF-19500 manufacturer profile

Renesas Electronics America — MIL-PRF-19500 JANS rad-hard power MOSFET sourcing (Intersil / Harris / GE / RCA Palm Bay heritage)

Renesas Electronics America's Palm Bay, Florida wafer fab is the direct descendant of five iconic U.S. semiconductor houses — Radiation Incorporated (founded 1950), Harris Semiconductor, GE Solid State, RCA Solid State, and Intersil. Renesas closed its acquisition of Intersil on February 24, 2017, inheriting Palm Bay, its CAGE Code 34371 and one of the deepest rad-hard discrete pedigrees in U.S. defense electronics. On June 18, 2025 DLA Land and Maritime issued Renesas a MIL-PRF-19500R JANS Manufacturer's Certification for radiation-hardened power MOSFET discrete products (VQE-25-039605).

  • 1950 heritage
    Founded
  • Palm Bay, FL
    Hi-Rel Fab
  • Renesas (TYO)
    Ownership
  • 34371
    CAGE Code
  • JANS / JANSR
    Quality Levels
  • Rad-Hard MOS
    Portfolio Focus

About Renesas Electronics America and the Palm Bay hi-rel line

Renesas Electronics Corporation is a Japanese semiconductor major listed on the Tokyo Stock Exchange as TSE: 6723 and headquartered at TOYOSU FORESIA in Koto-ku, Tokyo. Its current corporate form dates to April 1, 2010, when the former NEC Electronics (spun out of NEC in November 2002) and Renesas Technology (a 2003 Hitachi – Mitsubishi Electric joint venture) merged into a single company. In the years that followed, Renesas broadened its portfolio far beyond its traditional microcontroller base through a series of analog and mixed-signal acquisitions — notably Intersil in 2017, IDT in 2019 and Dialog Semiconductor in 2021.

The Intersil deal is the reason Renesas appears on the MIL-PRF-19500 QPL today. Intersil brought with it the 1650 Robert J. Conlan Blvd. NE, Palm Bay, Florida wafer fab — a DLA Land and Maritime QML-certified hi-rel discrete and analog IC facility that carries CAGE Code 34371 and one of the most storied lineages in U.S. defense semiconductors. That single site is the modern home of five prior corporate identities:

  • Radiation Incorporated — founded in 1950 by Homer Denius and George Shaw, initially in a small space at Naval Air Station Melbourne, Florida, building telemetry electronics for the earliest U.S. space efforts.
  • General Electric Solid State — GE's silicon device business (Syracuse, NY, from the mid-1950s onward), including a pioneering power MOSFET group.
  • RCA Solid State — a CMOS and rad-hard power semiconductor pioneer out of Somerville and Princeton, New Jersey, and originator of many still-cited part-number families.
  • Harris Semiconductor — formed after Harris Corporation acquired Radiation Inc. in 1967 and grew by consolidation.
  • Intersil — the second Intersil Corporation, spun out of Harris in 1999 in what was at the time the largest IPO in U.S. semiconductor history.

The consolidation ran roughly as follows: Harris Corporation acquired Radiation Incorporated in 1967. GE acquired the original Intersil in 1981 and RCA in 1986, folding both semiconductor operations into GE Solid State. In December 1988, the Harris Semiconductor Sector merged with GE Solid State, pulling the GE, RCA and original Intersil semiconductor lines under one roof at Harris. In August 1999, Harris divested that entire business and a new Intersil Corporation was created as a spinout — the largest American semiconductor IPO to that date, listed on NASDAQ as ISIL from February 25, 2000. Renesas completed its acquisition of Intersil on February 24, 2017 and today runs the Palm Bay site as part of Renesas Electronics America, with the space and hi-rel portfolio still commonly marketed under the Renesas Intersil brand.

QPL / QML-19500 status

The Defense Logistics Agency (DLA) Land and Maritime real-time list of qualified sources for MIL-PRF-19500 currently shows Renesas under a single active entry:

  • Renesas Electronics America Inc. Corporation — 1650 Robert J. Conlan Blvd. NE, Palm Bay, FL 32905, US — CAGE Code 34371 — DLA program point of contact Heather Cohn, (321) 456-6648

The current-generation certification is documented in the JANS Manufacturer's Certification letter that DLA Land and Maritime (VAC) sent to Renesas on June 18, 2025, reference VQE-25-039605, following a full onsite qualification audit on October 29 – 31, 2024. That audit was conducted by Zade Karadsheh, Al Barone and Sterling Henarie of DLA Land and Maritime, with Benny Damron representing NASA and George Peterson representing Navy-Crane in attendance. The letter certifies Renesas as a manufacturer eligible to qualify and supply JANS Radiation Hardened Power MOSFET discrete products in accordance with MIL-PRF-19500R, with wafer fabrication and Group D testing (Total Ionizing Dose and Single Event Effects) performed at Palm Bay and device assembly performed under contract at VPT Components, 9 Hampshire Street, Lawrence, Massachusetts. The certification is valid for two years and is subject to periodic review.

What makes Renesas distinctive on QPL-19500 is not the breadth of its slash-sheet footprint but the depth of the rad-hard pedigree behind it. The Palm Bay line is one of only a small number of DLA Land and Maritime QML sources authorized to manufacture Radiation Hardness Assurance (RHA) graded discrete devices, and the wafer processes it uses to hit JANS space-level qualifications trace directly back to power MOSFET and rad-hard bipolar work done at RCA Solid State in the early 1980s and to Naval Weapons Support Center Crane rad-hard DMOS contracts under the SDI / Star Wars program later that decade.

MIL-PRF-19500 quality levels — what JAN, JANTX, JANTXV and JANS actually mean

MIL-PRF-19500 is the U.S. Department of Defense performance specification for hermetically-sealed discrete semiconductor devices — diodes, rectifiers, transistors, thyristors, SCRs and TVS devices — administered by the DLA Land and Maritime office in Columbus, Ohio (the successor organization to DSCC-VQ). The current revision is MIL-PRF-19500R, dated 24 July 2021. The specification defines an ascending stack of product-assurance levels indicated by the prefix on a part number:

Prefix Level name What it adds Typical use case
JAN Joint Army-Navy Baseline qualification against slash sheet, Group A/B/C conformance Ground defense, ruggedized industrial
JANTX JAN with eXtra Testing Adds 168-hour burn-in and additional 100% electrical screening Airborne, avionics, missile
JANTXV JANTX with Visual inspection Adds 100% pre-cap internal visual inspection Higher-reliability avionics, tactical space
JANS Joint Army-Navy-Space Adds wafer lot acceptance, Group E conformance and full space screening Launch vehicles, satellites, deep space
JANHC / JANKC Chip / die-level Unencapsulated die screening for downstream hybrid assembly MIL-PRF-38534 hybrids, custom modules

For JANS parts, MIL-PRF-19500 further defines eleven Radiation Hardness Assurance (RHA) levels, encoded as a single character (E, K, U, M, D, P, L, R, F, G or H) inserted into the part number just after the JANS prefix. Those characters correspond to Total Ionizing Dose (TID) guarantees that run from 3 krad(Si) at "M" up to 1 Mrad(Si) at "H". The R suffix — 100 krad(Si) — is the RHA level that appears on the bulk of Renesas' current JANSR-prefixed rad-hard power MOSFETs (for example the JANSR2N7xxx family). On top of the individual part-type qualification (the older Qualified Products List, QPL) the DoD now operates a line-level certification model called the Qualified Manufacturers List (QML), which is the framework Renesas Palm Bay is certified against.

Renesas' MIL-PRF-19500 product portfolio

Unlike a broad-line hi-rel discrete supplier, Renesas' MIL-PRF-19500 line is deliberately focused: the Palm Bay JANS certification is scoped to radiation-hardened power MOSFETs. What Renesas brings to that niche is a wafer process pedigree developed inside RCA Solid State in the early 1980s, hardened under DoD Star Wars contracts in the late 1980s, and continuously extended through Harris, Intersil and now Renesas era programs. In line with buyer intent, this page lists part families and slash sheets rather than individual JAN part numbers — specific part-number availability is confirmed on quote.

N-channel rad-hard power MOSFETs

The core of the Palm Bay MIL-PRF-19500 offering is a family of N-channel rad-hard power MOSFETs that spans roughly 60 V to 500 V BVdss, from small-signal service through multi-hundred-watt drive. Representative slash sheets include /601 (100 V and 200 V N-channel devices in TO-205AF and 18-pin LCC), /603 (100 V / 200 V / 500 V N-channel in TO-254AA and SMD-1), /614 (100 V and 200 V N-channel in TO-257AA and SMD-0.5), /661 (higher-power 400 V and 500 V N-channel in TO-254AA and TO-254AA TL, up to 250–300 W dissipation), and /698 (a very low Rds(on) 60 V / 45 A family in TO-254AA). Additional N-channel slash sheets active on this line include /683, /685, /744 and /746. Devices are marketed under both their MIL-designated JANSR2N7xxx JAN numbers and their internal RAD7xxx product-family designations.

P-channel rad-hard power MOSFETs

Complementing the N-channel line, Renesas Palm Bay also produces P-channel rad-hard power MOSFETs qualified against slash sheet /630, typically in TO-205AF and hermetic ceramic surface-mount options. This is a legacy strength of the RCA / GE / Harris power MOS process work that fed complementary drive circuit designs in avionics power converters.

Package and RHA options

The portfolio ships in the standard MIL-PRF-19500 rad-hard MOSFET package inventory: TO-205AF (TO-39), TO-254AA, TO-254AA TL, TO-257AA and TO-257AA TL in through-hole, and SMD-0.2, SMD-0.5, SMD-0.5 Ceramic, SMD-1, SMD-2 and 18-pin LCC in ceramic surface-mount. Product-assurance levels available across these packages span JANTXV and JANTXVR (avionics-level with RHA), the space-level JANS and JANSR flows, and a low-cost JANSR-Lite option that carries space-level radiation performance under a shortened lead-time flow.

Radiation performance and single-event effects

Renesas' rad-hard MOSFET flow is characterized for Total Ionizing Dose (TID) typically to 100 krad(Si) at the R RHA level, with device families spanning 30 krad through 300 krad depending on slash sheet. In addition, the Palm Bay flow includes Low Dose Rate (LDR) screening and full Single Event Effects (SEE) characterization — specifically Single Event Burnout (SEB) and Single Event Gate Rupture (SEGR) — on every qualified device family. Group D radiation testing is performed at Palm Bay; the site includes its own low-dose-rate irradiation capability inherited from the Intersil era.

Companion Class V analog IC portfolio

Palm Bay also holds MIL-PRF-38535 QML Class Q/V/T/M certification on the same CAGE Code, which is what enables Renesas to ship the >400 Intersil-brand radiation-hardened ICs that fly on programs such as Orion, Artemis, and Perseverance. Those Class V products are outside the MIL-PRF-19500 scope of this page but they share the same wafer fab, the same test floor and the same Hi-Rel Space Product and Test Engineering group in Palm Bay.

Space-flight heritage — Radiation Inc. to Perseverance

The Palm Bay heritage begins at the beginning of the American space era. Radiation Incorporated built telemetry electronics from a small space at Naval Air Station Melbourne, Florida for the earliest DoD and NASA launch programs starting in the early 1950s. After Harris Corporation acquired Radiation Inc. in 1967, the site's output flew on Voyager 1 (launched 1977) and on the deep-space and defense-satellite programs that followed. Rad-hard power MOSFET development inside RCA Solid State and GE Solid State fed the same lineage: engineers on the original RCA Solid State "Rad Hard Power and Advanced Device Design Group" developed N-channel and P-channel radiation-hardened DMOS under contract to Naval Weapons Support Center (NWSC), Crane, Indiana as part of the Strategic Defense Initiative in the late 1980s. Those processes migrated into Harris, then into Intersil, and then into Renesas Palm Bay.

More recent flight examples of Renesas / Intersil rad-hard content include NASA's Orion Exploration Flight Test 1 on December 5, 2014 (16 Intersil rad-hard ICs), the JAXA Hayabusa2 asteroid sample-return mission (launched 2014, sample returned 2020), NASA's Mars Perseverance rover (landed February 18, 2021, carrying 20 Renesas Intersil-brand rad-hard ICs), and Artemis I (launched November 2022) which carried hundreds of Renesas Intersil radiation-hardened parts on board. Renesas states that its space and defense heritage now spans more than seven decades, with product on virtually every U.S. satellite launched into orbit.

For the MIL-PRF-19500 rad-hard MOSFET side of the portfolio specifically, this matters because power MOSFET single-event effects (SEB and SEGR in particular) are notoriously difficult to guarantee across a whole wafer lot. The Palm Bay flow uses wafer-lot acceptance and high-dose-rate acceptance testing on every JANS lot, together with LDR characterization — capabilities that were built up over decades of continuous rad-hard production at this one site.

How Hybrid Electronics sources Renesas / Intersil JAN parts

Hybrid Electronics Corporation is a Sanford, Florida-based independent stocking distributor and sourcing agent, founded in 1981 as Knight Electronics. We are not an authorized distributor, agent, licensee, or franchised partner of Renesas Electronics Corporation, Renesas Electronics America or Intersil Corporation. What we do is help defense, aerospace, and industrial buyers close JAN-level BOMs when the mainstream authorized channel cannot support the exact date code, package variant, or obsolete lot they need.

Obsolete Harris / Intersil / GE / RCA discrete inventory

Discontinued Harris Semiconductor, GE Solid State, RCA Solid State, and legacy Intersil part numbers, older date codes, and slash-sheet revisions no longer in current Renesas production. We source excess from OEMs, CMs and long-term storage stocks with date-coded traceability where possible.

Allocated current-production JANS rad-hard MOSFETs

JANSR-prefixed rad-hard power MOSFETs from the current Renesas Palm Bay flow that are on long lead time or allocation. Send us a shortage list or a full BOM — we will confirm what we can source, in which package, and at what lead time.

Slash-sheet and cross-reference sourcing

Have a MIL-PRF-19500 slash-sheet reference (e.g. /601, /603, /614, /630, /661, /698) but not a settled manufacturer part number? We can quote Renesas / Intersil options and, where useful, cross to equivalent QPL-19500 rad-hard MOSFET sources from other qualified manufacturers.

Frequently asked questions

Is Renesas Electronics America on the MIL-PRF-19500 QPL?

Yes. Renesas Electronics America Inc. is listed on the DLA Land and Maritime QML-19500 under CAGE Code 34371 at its Palm Bay, Florida facility. On June 18, 2025 DLA issued a MIL-PRF-19500R JANS Manufacturer's Certification (reference VQE-25-039605) covering JANS Radiation Hardened Power MOSFET discrete products, following a full audit October 29 – 31, 2024.

What is the Palm Bay Florida MIL-PRF-19500 heritage?

The Palm Bay hi-rel discrete line descends directly from Radiation Incorporated (founded 1950 in Melbourne, Florida), acquired by Harris Corporation in 1967. In December 1988, Harris Semiconductor merged with GE Solid State, folding in RCA Solid State and the original Intersil brand. Harris spun the combined semiconductor unit off as a new Intersil Corporation in August 1999 — the largest U.S. semiconductor IPO of its era — and Renesas acquired Intersil on February 24, 2017, inheriting the CAGE 34371 site and its DLA-qualified rad-hard product line.

What JAN quality level does Renesas hold on MIL-PRF-19500?

Renesas' Palm Bay facility is certified to the JANS space level under MIL-PRF-19500R, and its rad-hard power MOSFETs ship most commonly with the JANSR prefix — denoting the R Radiation Hardness Assurance level, 100 krad(Si) Total Ionizing Dose. The MIL-PRF-19500 specification also provides for JAN, JANTX, JANTXV and the die-level JANHC / JANKC quality levels on adjacent slash sheets, plus a lower-cost JANSR-Lite flow for space-level radiation performance at shorter lead times.

Which MIL-PRF-19500 slash sheets is Renesas qualified against?

Renesas Palm Bay's rad-hard power MOSFET line is qualified against a set of MIL-PRF-19500 slash sheets that includes /601, /603, /614, /630, /661, /683, /685, /698, /744 and /746. Together these span N-channel and P-channel devices from roughly 60 V to 500 V BVdss, from small-signal through 300 W dissipation, in TO-205AF, TO-254AA, TO-254AA TL, TO-257AA and SMD-0.5 / SMD-1 / SMD-2 / 18-pin LCC ceramic packages.

Where is Renesas' MIL-PRF-19500 product assembled?

Per the DLA certification letter, wafer fabrication and Group D radiation testing are performed at Renesas' own facility at 1650 Robert J. Conlan Blvd. NE, Palm Bay, FL 32905. Device assembly is performed under contract at VPT Components, 9 Hampshire Street, Lawrence, Massachusetts. All qualification tests, conformance inspections and screening must be performed at Renesas' facility or at facilities holding DLA Land and Maritime-VQE Laboratory Suitability Status.

What Renesas / Intersil part families does Hybrid Electronics source?

Hybrid Electronics sources Renesas (Intersil) rad-hard MOSFET part families across JAN, JANTX, JANTXV, JANS and JANSR quality levels, plus obsolete Harris, Intersil, GE Solid State and RCA Solid State discrete inventory carrying legacy Palm Bay date codes. We work by exact part number and by MIL-PRF-19500 slash-sheet reference and support both current-production and long-obsolete lots. Specific part-number availability is confirmed on quote.

Is Hybrid Electronics an authorized Renesas or Intersil distributor?

No. Hybrid Electronics is an independent stocking distributor and sourcing agent. We are not a distributor, reseller, agent, licensee, partner, or authorized service provider of Renesas Electronics Corporation, Renesas Electronics America, or Intersil Corporation. All trademarks are the property of their respective owners.

Trademark and affiliation notice. All company names, product names, and trademarks referenced on this page are the property of their respective owners. Hybrid Electronics Corporation is an independent stocking distributor and sourcing agent; we are not a distributor, reseller, agent, licensee, partner, or authorized service provider of Renesas Electronics Corporation, Renesas Electronics America Inc., or Intersil Corporation unless expressly stated. Component sourcing is subject to availability and inspection. Hybrid Electronics does not sell counterfeit parts and does not offer repair services. MIL-PRF-19500 and JAN quality-level designations are administered by the U.S. Defense Logistics Agency (DLA).