MIL-PRF-19500 manufacturer profile

EPC Space LLC — MIL-PRF-19500 JANS radiation-hardened GaN transistor sourcing

EPC Space LLC is a Massachusetts-based joint venture of Efficient Power Conversion Corporation (EPC) and VPT Inc. (part of HEICO Electronic Technologies Group). In April 2025 EPC Space became the first manufacturer in the world to place a Power GaN JANS device on the DLA MIL-PRF-19500 Qualified Products List — a milestone certification for gallium nitride High Electron Mobility Transistors (HEMTs) in space power. EPC Space is listed on the current DLA QML-19500 under CAGE Code 8QKQ6, with its Andover, Massachusetts assembly plant and its EPISIL Technologies wafer fab in Hsin-Chu, Taiwan.

  • June 2020
    Founded
  • Andover, MA
    HQ
  • EPC + VPT JV
    Ownership
  • 8QKQ6
    CAGE Code
  • JANS / JANTXV
    Quality Levels
  • /782 GaN HEMT
    Slash Sheet
  • >1 Mrad TID
    Rad Hardness
  • 200,000+
    Units in Orbit

About EPC Space and its parent companies

EPC Space LLC was formed in June 2020 as a joint venture between two established U.S. power-electronics companies. The first is Efficient Power Conversion Corporation (EPC) of El Segundo, California — founded in 2007 by Dr. Alex Lidow (formerly CEO of International Rectifier) and generally credited as the company that commercialized the first enhancement-mode gallium nitride power FET (eGaN®). The second is VPT Inc. of Blacksburg, Virginia, a space-grade DC-DC converter, EMI filter, and custom power specialist that today operates inside the HEICO Electronic Technologies Group, a subsidiary of HEICO Corporation (NYSE: HEI). The stated purpose of the joint venture, from day one, was to design and manufacture radiation-hardened enhancement-mode GaN-on-silicon power devices, drivers, and modules that are packaged, tested, and qualified for satellite and other high-reliability space applications.

EPC Space entered the market with a clear technology thesis: at the same breakdown voltage, an enhancement-mode GaN power FET offers higher switching frequency, lower gate charge, lower RDS(on), and lower switching losses than a comparable radiation-hardened silicon power MOSFET, and it does so in a smaller die and package. In September 2020 EPC Space launched its first family of rad-hard eGaN transistors spanning 40 V to 300 V and roughly 4 A to 30 A. In October 2020 it added a family of rad-hard eGaN gate drivers and half-bridge power stages designed to switch those transistors. The applications targeted — satellite electrical power systems, isolated and non-isolated DC-DC converters, motor drives for reaction wheels and control moment gyros, LiDAR for rendezvous and docking, and ion thrusters for electric propulsion — sit at the heart of the modern LEO/GEO NewSpace power stack.

The company operates from 200 Bulfinch Drive, Suite 160, Andover, Massachusetts 01810, its current DLA-listed assembly and test address. (The initial 2020 press materials described EPC Space as headquartered in nearby Haverhill, MA; operations were consolidated at the Andover site as the company scaled toward JANS certification.) Wafer fabrication is performed at the DLA-recognized foundry partner EPISIL Technologies Inc., at No. 18 Innovation Road I in the Science-Based Industrial Park, Hsin-Chu, Taiwan. Both the Andover assembly line and the EPISIL wafer line are listed as plant locations on EPC Space's DLA QML-19500 entry.

QPL / QML-19500 status

The Defense Logistics Agency (DLA) Land and Maritime real-time list of qualified sources for MIL-PRF-19500 shows a single active entry for the company:

  • EPC Space LLC — 200 Bulfinch Drive Ste 160, Andover, MA 01810, USA; CAGE Code 8QKQ6. Assembly and test performed at Andover; wafer fabrication performed at EPISIL Technologies Inc., Hsin-Chu, Taiwan.

What makes EPC Space distinctive on the QPL is what is qualified rather than how much. In December 2024, EPC Space announced that both the Andover facility and its Taiwan wafer fab had earned JANS MIL-PRF-19500 certification, and described the result — a JANS-certified Gallium Nitride High Electron Mobility Transistor (HEMT) — as a world first. On April 5, 2025 the company formally announced that the DLA had issued that certification and released the first two Qualified Products List entries, establishing the first-ever QPL Power GaN JANS devices. EPC Space publicly committed to qualifying 16 additional JANS GaN devices across a 40 V to 300 V voltage range over the following twelve months.

EPC Space's published quality register at epc.space now lists multiple DLA qualification approval letters, JANS and a JANTXV/JANS/Developmental comparison flow, a JANKC die-level extension letter, and formal notifications where a JANTX-only screening flow has been superseded by a higher JANS designation on the same device. The company also holds DLA Laboratory Suitability for MIL-STD-750 test methods and maintains a MIL-PRF-38535 equivalent qualification flow for its integrated GaN driver and power-stage ICs. Underlying quality management sits on top of AS9100D and BS EN ISO 9001:2015 registrations.

MIL-PRF-19500 quality levels — what JAN, JANTX, JANTXV, and JANS actually mean

MIL-PRF-19500 is the U.S. Department of Defense performance specification for hermetically-sealed discrete semiconductor devices — diodes, rectifiers, transistors, thyristors, SCRs, and TVS devices — administered by the DLA Land and Maritime office in Columbus, Ohio (the successor organization to DSCC-VQ). The specification defines a stack of ascending product-assurance levels indicated by the prefix on a part number:

Prefix Level name What it adds Typical use case
JAN Joint Army-Navy Baseline qualification against slash sheet, Group A/B/C conformance Ground defense, ruggedized industrial
JANTX JAN with eXtra Testing Adds 168-hour burn-in and additional 100% electrical screening Airborne, avionics, missile
JANTXV JANTX with Visual inspection Adds 100% pre-cap internal visual inspection Higher-reliability avionics, tactical space
JANS Joint Army-Navy-Space Adds wafer lot acceptance, Group E conformance and full space screening Launch vehicles, satellites, deep space
JANHC / JANKC Chip / die-level Unencapsulated die screening for downstream hybrid assembly MIL-PRF-38534 hybrids, custom modules

For JANS parts, MIL-PRF-19500 further defines eight Radiation Hardness Assurance (RHA) levels, encoded as a single character (M, D, P, L, R, F, G, or H) inserted into the part number just after the JANS prefix. Those characters correspond to Total Ionizing Dose (TID) guarantees ranging from 3 krad(Si) at "M" up to 1 Mrad(Si) at "H". EPC Space's initial JANS releases carry a JANSH prefix — the highest H-grade RHA level — reflecting the guaranteed >1 Mrad TID performance of the underlying enhancement-mode GaN structure. On top of the individual part-type qualification (the older Qualified Products List, QPL), the DoD now operates a line-level certification model called the Qualified Manufacturers List (QML), which is the framework EPC Space's Andover plant and EPISIL wafer fab are certified under.

EPC Space's MIL-PRF-19500 product portfolio

Unlike the broad silicon-diode incumbents on QPL-19500, EPC Space's portfolio is focused and vertical: radiation-hardened enhancement-mode GaN-on-silicon power devices, from bare transistors to integrated drivers and modules. In line with buyer intent, this page lists part families and slash sheets rather than individual JAN part numbers — specific part-number availability is confirmed on quote.

Rad-hard eGaN power HEMTs (40 V to 300 V)

This is the core family and the source of EPC Space's world-first JANS status. Enhancement-mode GaN High Electron Mobility Transistors span roughly 40 V, 60 V, 100 V, 200 V, and 300 V classes at continuous currents from a few amps to tens of amps, with pulsed ratings substantially higher. The initial released JANS family — the 40 V FSMD-B flip-chip surface-mount package — is qualified against MIL-PRF-19500/782. Additional slash sheets are being added as the roadmap of 18 total JANS-qualified GaN HEMTs is populated across the full 40 V to 300 V voltage range. All released JANS parts guarantee >1 Mrad(Si) TID and Single Event Effects (SEE) immunity at LET ≥ 85 MeV/(mg·cm²) at rated VDS.

Rad-hard GaN gate drivers

Purpose-built to switch the eGaN HEMTs above at multi-MHz frequencies. The driver family includes ultra-fast low-side eGaN drivers, ultra-fast dual low-side eGaN drivers, and half-bridge drivers with integrated eGaN power switches. These parts are targeted at high-speed DC-DC conversion, synchronous rectification, satellite electrical power systems (EPS), avionics power, and multi-phase motor drives. EPC Space qualifies its integrated GaN ICs against a MIL-PRF-38535 equivalent screening flow layered on top of the MIL-PRF-19500 discrete framework.

Rad-hard GaN driver + power-stage modules

Module-level rad-hard power stages that combine a driver and one or more GaN switches in a single ceramic or FSMD assembly. These modules simplify integration for satellite primary and secondary power supplies, brushless motor drives, and payload power distribution, and inherit the JANS or JANTXV screening flow of the underlying GaN die.

Rad-hard GaN die on ceramic adapter

Bare-die and adapter-mounted rad-hard GaN devices for hybrid integrators building MIL-PRF-38534 multi-chip modules and custom space power hybrids. This format lines up with the JANHC and JANKC die-level product-assurance flow inside MIL-PRF-19500 — EPC Space has a JANKC Extension Letter on file with the DLA.

Plastic surface-mount eGaN transistors for space computing

In August 2026 EPC Space announced three additional rad-hard eGaN power transistors in plastic surface-mount packages, positioned specifically for next-generation space computing (mission processors, high-density AI/ML compute payloads, and edge-inference workloads on orbit). These parts are offered in engineering-model and rad-hard space-qualified variants and share the underlying >1 Mrad and LET-85 radiation performance of the core JANS line.

Packaging heritage

EPC Space qualifies its GaN devices in FSMD (Flip-Chip Surface Mount Device) A, B, and G footprints for packaged HEMTs, plus bare die and die-on-ceramic-adapter formats for hybrid integrators. Package selection is optimized around the low parasitic inductance that the GaN switching-speed advantage depends on — a departure from the axial hermetic glass and metal-can heritage that dominates the silicon side of QPL-19500.

Space-flight heritage

EPC Space's rad-hard GaN devices reached orbit before they held formal JANS qualification. The parent-company GaN transistors have been flying since January 2019 under earlier screened-COTS and lot-acceptance flows, and the company today cites more than 200,000 rad-hard GaN power devices in orbit across LEO and GEO, spanning both commercial and U.S. government programs. That installed base — accumulated in the roughly six years leading up to the April 2025 JANS milestone — is what allowed EPC Space to enter the QPL with mature parts rather than first-lot devices.

On the qualification side, every EPC Space JANS device is designated rad hard by design and is guaranteed to Total Ionizing Dose > 1 Mrad(Si) and Single Event Effects immunity at LET ≥ 85 MeV/(mg·cm²). Because those numbers correspond to the H-grade RHA level in the MIL-PRF-19500 framework, EPC Space parts are typically ordered with the JANSH prefix. Low-Dose-Rate Sensitivity (LDRS) behavior is also characterized as part of the JANS Group E conformance. In physical terms, GaN's wide bandgap and the lack of a gate-oxide (the failure site of silicon MOSFETs under TID) make the technology inherently well suited to space, and EPC Space's flight heritage on power supplies, motor drives, ion thrusters, and LiDAR reflects that.

How Hybrid Electronics sources EPC Space JANS GaN parts

Hybrid Electronics Corporation is a Sanford, Florida-based independent stocking distributor and sourcing agent, founded in 1981 as Knight Electronics. We are not an authorized distributor, agent, licensee, or franchised partner of EPC Space LLC, Efficient Power Conversion Corporation, VPT Inc., or HEICO Corporation. What we do is help defense, aerospace, and satellite buyers close JAN-level GaN BOMs when the mainstream authorized channel cannot support the exact package variant, screening flow, or lot they need — including allocated flight lots and end-of-programme excess.

Allocated JANS GaN inventory

Newly-released JANS-qualified rad-hard GaN HEMTs and driver/power-stage ICs on allocation or extended lead time. Send us the family (voltage class, package, JANSH prefix), and we will confirm what we can source, in which package footprint, and at what lead time.

Legacy screened rad-hard GaN

Pre-JANS screened rad-hard GaN inventory used on the ∼200,000 units flying since 2019 — useful for programme continuity, spares, and flight-heritage lot traceability where a JANSH refresh isn't required.

Slash-sheet and cross-reference sourcing

Have a MIL-PRF-19500 slash-sheet reference (e.g. /782 for the initial EPC Space 40 V GaN JANS family) but not a settled manufacturer part number? We can quote EPC Space options and, where useful, cross to the other qualified rad-hard GaN source under a different slash sheet.

Frequently asked questions

Is EPC Space on the MIL-PRF-19500 QPL?

Yes. EPC Space LLC is listed on the current DLA Land and Maritime QML-19500 as an active qualified source under CAGE Code 8QKQ6. The DLA record shows EPC Space's Andover, Massachusetts assembly plant together with its wafer fab at EPISIL Technologies in Hsin-Chu, Taiwan. In April 2025 EPC Space became the first manufacturer ever to place a Power GaN JANS device on the QPL under MIL-PRF-19500.

Who owns EPC Space?

EPC Space LLC is a joint venture formed in June 2020 by Efficient Power Conversion Corporation (EPC) of El Segundo, California — the eGaN power FET pioneer — and VPT Inc. of Blacksburg, Virginia, which is part of HEICO Electronic Technologies Group (a subsidiary of HEICO Corporation, NYSE: HEI).

What quality levels does EPC Space hold under MIL-PRF-19500?

EPC Space's Quality Management System is certified to MIL-PRF-19500R. Published DLA qualification approval letters cover JANS space-level devices (with the JANSH prefix indicating an H-grade Radiation Hardness Assurance level, i.e. 1 Mrad TID), the JANTXV level via the company's published JANS/JANTXV/Developmental qualification comparison flow, and a JANKC die-level extension. EPC Space also holds DLA Laboratory Suitability under MIL-STD-750 test methods.

Which MIL-PRF-19500 slash sheet covers EPC Space's GaN HEMTs?

The initial 40 V rad-hard GaN JANS family from EPC Space is qualified against MIL-PRF-19500/782. Additional slash sheets are being added as the company qualifies its 60 V, 100 V, 200 V, and 300 V HEMTs and its driver/power-stage products against the specification. A separate rad-hard GaN slash sheet, MIL-PRF-19500/794, belongs to Infineon (IR HiRel) and should not be confused with EPC Space's /782 family.

What radiation performance is guaranteed on EPC Space JANS parts?

Every EPC Space JANS device is rated rad hard by design, with Total Ionizing Dose > 1 Mrad(Si) and Single Event Effects immunity at LET ≥ 85 MeV/(mg·cm²) at rated VDS. Low Dose Rate Sensitivity behavior is characterized as part of Group E conformance under JANS.

What EPC Space part families does Hybrid Electronics source?

Hybrid Electronics sources EPC Space rad-hard GaN part families including JANS-qualified enhancement-mode GaN power HEMTs from 40 V to 300 V, rad-hard low-side and dual low-side eGaN gate drivers, half-bridge driver plus eGaN power-stage ICs, rad-hard GaN driver and power-stage modules, and rad-hard GaN die on ceramic adapter for hybrid MIL-PRF-38534 integrators. We work by exact part number and by slash-sheet reference and support both current-production and legacy screened-rad-hard inventory.

Is Hybrid Electronics an authorized EPC Space distributor?

No. Hybrid Electronics is an independent stocking distributor and sourcing agent. We are not a distributor, reseller, agent, licensee, partner, or authorized service provider of EPC Space LLC, Efficient Power Conversion Corporation, VPT Inc., or HEICO Corporation. All trademarks are the property of their respective owners.

Trademark and affiliation notice. All company names, product names, and trademarks referenced on this page are the property of their respective owners. Hybrid Electronics Corporation is an independent stocking distributor and sourcing agent; we are not a distributor, reseller, agent, licensee, partner, or authorized service provider of EPC Space LLC unless expressly stated. Component sourcing is subject to availability and inspection. Hybrid Electronics does not sell counterfeit parts and does not offer repair services. MIL-PRF-19500 and JAN quality-level designations are administered by the U.S. Defense Logistics Agency (DLA).